ZXSDS2M832TA

Maximum Power Dissipation :
Mounting Style : SMD/SMT
Product : Schottky Diodes
Operating Temperature Range : - 55 C to + 125 C
Packaging : Reel
Peak Reverse Voltage : 60 V
Recovery Time : 12 ns
Configuration : Dual Parallel
Maximum Reverse Leakage Current : 100 uA at 45 V
Forward Continuous Current : 1.24 A
Max Surge Current : 16.8 A
Forward Voltage Drop : 0.74 V at 1.5 A
Package / Case : MLP-832


Features:

• Extremely Low V_F, fast switching Schottky
• I_F= 1.65A Continuous Forward Current
• 3mm x 2mm MLP


Application

• DC-DC Converters
• DC-DC Modules
• Mosfet gate drive circuits
• Charging circuits
• Mobile Phones
• Motor Control


Specifications

Parameter	Symbol	Rating	Unit
Reverse Voltage	VR	60	V
Forward Voltage @ IF = 1000mA	VF	600	mV
Forward Current	IF	1.65	A
Average Forward Current D=50%, t<=300us	IFAV	1.24	A
Non Repetitive Forward Current t<=100us Non Repetitive Forward Current t<=10ms	IFSM	16.8 5.63	A A
Power Dissipation at TA=25 (a)(f) Linear Derating Factor	PD	1.2 12	W mW/
Power Dissipation at TA=25 (b)(f) Linear Derating Factor	PD	2 20	W mW/
Power Dissipation at TA=25 (c)(f) Linear Derating Factor	PD	0.8 8	W mW/
Power Dissipation at TA=25 (d)(f) Linear Derating Factor	PD	0.9 9	W mW/
Power Dissipation at TA=25 (d)(g) Linear Derating Factor	PD	1.36 13.6	W mW/
Power Dissipation at TA=25 (e)(g) Linear Derating Factor	PD	2.4 24	W mW/
Storage Temp, Range	Tstg	-55 to+150
Operating & Storage Temp, Range	Tj	-55 to+150

NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is R_th= 250/W giving a power rating of P_tot=400mW.

Description

ZXSDS2M832TA Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits.