Features: • Low on-resistance• Fast switching speed• Low gate drive• SO8 packageApplication• DC-DC Converters• Power management functions• Disconnect switches• Motor controlPinoutSpecifications Parameter Symbol Limit Unit Drain-Sou...
ZXMN6A25N8: Features: • Low on-resistance• Fast switching speed• Low gate drive• SO8 packageApplication• DC-DC Converters• Power management functions• Disconnect switch...
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Parameter |
Symbol |
Limit |
Unit |
Drain-Source voltage |
VDSS |
60 |
V |
Gate-Source voltage |
VGS |
±20 |
V |
Continuous Drain current @ VGS= 10V; TA=25 (b) @ VGS= 10V; TA=70 (b) @ VGS= 10V; TA=25 (a) @ VGS= 10V; TL=25 (a)(d) |
ID |
5.7 4.5 4.3 7.0 |
A |
Pulsed Drain current (c) |
IDM |
25.7 |
A |
Continuous Source current (Body diode) (b) |
IS |
4.1 |
A |
Pulsed Source current (Body diode) (c) |
ISM |
25.7 |
A |
Power dissipation at TA =25 (a) Linear derating factor |
PD |
1.56 12.5 |
W mW/ |
Power dissipation at TA =25 (b) Linear derating factor |
PD |
2.8 22.2 |
W mW/ |
Power dissipation at TL =25 (d) Linear derating factor |
PD |
4.14 33.1 |
W mW/ |
Operating and storage temperature range |
Tj,Tstg |
-55 to 150 |
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) Mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
This new generation Trench MOSFET ZXMN6A25N8 from Zetex features low on-resistance and fast switching,making it ideal for high efficiency power management applications.