Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between high voltage pinsApplication• Off-line power supply start-up circuitryPinoutSpecifications ...
ZXMN0545G4: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between hi...
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PARAMETER | SYMBOL | VALUE | UNIT |
Drain-Source Voltage | VDS | 450 | V |
Gate Source Voltage | VGS | ±20 | V |
Continuous Drain Current (VGS=10V; Tamb=25°C)(a) | ID | 140 | mA |
Pulsed Drain Current (c) | IDM | 600 | mA |
Continuous Source Current (Body Diode) (b) | IS | 140 | A |
Pulsed Source Current (Body Diode) (c) | ISM | 600 | A |
Power Dissipation at Tamb=25°C (a) Linear derating factor |
Ptot | 2.0 1.6 |
W mW/ |
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
This 450V enhancement mode N-channel MOSFET ZXMN0545G4 provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.