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ZXMN10A07F

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions• Relay and Solenoid driving• Motor controlPinoutSpecifications PARAMETER SYMBOL ...

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ZXMN10A07F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions...

ZXMN10A07F Data Sheet

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Part Number:
ZXMN10A07F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package




Application

• DC - DC Converters
• Power Management Functions
• Relay and Solenoid driving
• Motor control




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 100 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (a)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(d)
 ID 0.64
0.51
0.56		 A
Pulsed Drain Current (c) IDM 2.5 A
Continuous Source Current (Body Diode) (b) IS 2 A
Pulsed source current (body diode) (c) ISM 2.5 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 625
5		 W
mW/°C
Power Dissipation at TA=25°C(b)
Linear Derating Factor		 PD 806
6.4		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C


Part Number ZXMN10A07F
Config/
Polarity		 N
PD
(W)		 0.8
VDSS
(V)		 100
VGSS (+/-)
(V)		 20
ID
(A)		 0.8
RDS(on) Max() @ VGS; 2.4V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.6V
RDS(on) Max() @ VGS; 3V
RDS(on) Max() @ VGS; 4.3V
RDS(on) Max() @ VGS; 4.5V
RDS(on) Max() @ VGS; 5V
RDS(on) Max() @ VGS; 6V 0.9
RDS(on) Max() @ VGS; 10.0V 0.7
VGS(th)
(V)		 2
Ciss (typ)
(pF)		 138
Qg (typ) (nC)
@ VGS;4.5V
Qg (typ) (nC)
@ VGS; 10V		 2.9





Description

This new generation of TRENCH MOSFETs ZXMN10A07F from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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