ZXMN6A25K

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 7A
Manufacturer: Diodes Inc
Supplier Device Package: TO-252-3
Power - Max: 2.11W
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
Gate Charge (Qg) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 1063pF @ 30V


Features:

• Low on-resistance
• Fast switching speed
• Low gate drive
• DPAK package




Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control




Pinout






Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current @ VGS= 4.5V; Tamb=25(b) @ VGS= 4.5V; Tamb=70 (b) @ VGS= 4.5V; Tamb=25(a)	ID	10.7 8.6 7	A
Pulsed drain current (c)	IDM	36	A
Continuous source current (body diode) (b)	IS	11.8	A
Pulsed source current (body diode) (c)	ISM	36	A
Power dissipation at Tamb=25(a) Linear derating factor	PD	4.25 34	W mW/
Power dissipation at Tamb=25 (b) Linear derating factor	PD	9.85 78.7	W mW/
Power dissipation at Tamb=25 (d) Linear derating factor	PD	2.11 16.8	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to +150

Description

This new generation trench MOSFET ZXMN6A25K from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.