ZXMN6A25G

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Current - Continuous Drain (Id) @ 25° C: 4.8A
Packaging: Cut Tape (CT)
Manufacturer: Diodes Inc
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
Gate Charge (Qg) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 1063pF @ 30V


Features:

• Low on-resistance
• Fast switching speed
• Low gate drive
• SOT223 package




Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control




Pinout






Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current @ VGS = 10V; Tamb = 25(b) @ VGS = 10V; Tamb = 70(b) @ VGS = 10V; Tamb = 25(a)	ID	6.7 5.4 4.8	A A A
Pulsed drain current(c)	IDM	28.5	A
Continuous source current (body diode)(b)	IS	5.7	A
Pulsed source current (body diode)(c)	ISM	28.5	A
Power dissipation at Tamb = 25(a) Linear derating factor	PD	2 16	W mW/
Power dissipation at Tamb = 25(b) Linear derating factor	PD	3.9 31	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to +150

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.




Description

This new generation trench MOSFET ZXMN6A25G from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.