ZXMN6A11ZTA

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 3.6 A
Configuration : Single Dual Drain
Package / Case : SOT-89
Resistance Drain-Source RDS (on) : 120 mOhms


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package


Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control


Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current @ VGS= 10V; Tamb=25(b) @ VGS= 10V; Tamb=70(b) @ VGS= 10V; Tamb=25(a)	ID	3.6	A
		2.9
		2.7
Pulsed drain current(c)	IDM	14.5	A
Continuous source current (body diode)(b)	IS	3.7	A
Pulsed source current (body diode)(c)	ISM	14.5	A
Power dissipation at Tamb =25(a) Linear derating factor	PD	1.5 12	W mW/
Power dissipation at Tamb =25(b) Linear derating factor	PD	2.6 21	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to +150

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.

Description

This new generation trench MOSFET ZXMN6A11ZTA from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.