Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC - DC Converters• Power Management Functions• Relay and Solenoid driving• Motor controlPinoutSpecifications PARAMETER SYMBOL ...
ZXMN6A11G: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC - DC Converters• Power Management Function...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 60 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (a) VGS=10V; TA=70°C(b) VGS=10V; TA=25°C(d) |
ID | 3.8 3.0 2.7 |
A |
Pulsed Drain Current (c) | IDM | 10 | A |
Continuous Source Current (Body Diode) (b) | IS | 5 | A |
Pulsed source current (body diode) (c) | ISM | 10 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 2.0 16 |
W mW/°C |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD | 3.9 31 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN6A11G from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.