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ZXMN6A11DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SO8 packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBO...

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ZXMN6A11DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SO8 packageApplication• DC - DC Converters• Power Management...

ZXMN6A11DN8 Data Sheet

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Part Number:
ZXMN6A11DN8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SO8 package




Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control




Pinout






Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 60 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (a)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(d)
 ID 2.7
2.2
2.1		 A
Pulsed Drain Current (c) IDM 8.3 A
Continuous Source Current (Body Diode) (b) IS 3.2 A
Pulsed source current (body diode) (c) ISM 8.3 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C(b)
Linear Derating Factor		 PD 1.8
14		 W
mW/°C
Power Dissipation at TA=25°C(d)
Linear Derating Factor		 PD 2.1
17		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN6A11DN8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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