Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• D-Pak (T0-252) packageApplication• DC-DC Converters• Power Management functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBOL ...
ZXMN6A09K: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• D-Pak (T0-252) packageApplication• DC-DC Converters• Power Management fu...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 60 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (a) VGS=10V; TA=70°C(b) VGS=10V; TA=25°C(d) |
ID | 11.2 9.0 7.3 |
A |
Pulsed Drain Current (c) | IDM | 40 | A |
Continuous Source Current (Body Diode) (b) | IS | 10.8 | A |
Pulsed source current (body diode) (c) | ISM | 40 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 4.3 34.4 |
W mW/°C |
Power Dissipation at TA=25°C(d) Linear Derating Factor |
PD | 10.1 80.8 |
W mW/°C |
Power Dissipation at TA=25°C(d) Linear Derating Factor |
PD | 2.15 17.2 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of Trench MOSFETs ZXMN6A09K from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.