ZXMN6A09GTA

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 40 mOhms


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package


Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control


Pinout




Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	± 20	V
Continuous drain current @ VGS= 10V; Tamb=25(b) @ VGS= 10V; Tamb=70(b) @ VGS= 10V; Tamb=25(a)	ID	7.5 6 5.4	A
Pulsed drain current(c)	IDM	33	A
Continuous source current (body diode)(b)	IS	3.5	A
Pulsed source current (body diode)(c)	ISM	33	A
Power dissipation at Tamb =25(a) Linear derating factor	PD	2 16	W mW/
Power dissipation at Tamb =25(b) Linear derating factor	PD	3.9 31	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to +150

Description

This new generation of trench MOSFETs ZXMN6A09GTA from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.