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ZXMN6A09G

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Relay and Solenoid driving• Motor controlPinoutSpecifications PARAMETE...

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ZXMN6A09G: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

ZXMN6A09G Data Sheet

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Part Number:
ZXMN6A09G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• DC - DC Converters
• Power Management Functions
• Relay and Solenoid driving
• Motor control




Pinout






Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 60 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
 ID 6.9
5.6
5.0		 A
Pulsed Drain Current (c) IDM 30.6 A
Continuous Source Current (Body Diode) (b) IS 3.5 A
Pulsed source current (body diode) (c) ISM 30.6 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 2.0
16		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 3.9
31		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETsZXMN6A09G from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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