Position: Home  > All Categories> Integrated Circuits (ICs) > ZXMN6A09DN8

ZXMN6A09DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMB...

product image

ZXMN6A09DN8 Picture
See larger image
SeekIC No. : 004552511 Detail

ZXMN6A09DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

ZXMN6A09DN8 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ZXMN6A09DN8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control




Pinout






Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 60 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d)
VGS=4.5V; TA=70°C (b)(d)
TA=25°C (a)(d)
 ID 5.2
4.1
3.9		 A
Pulsed Drain Current (c) IDM 17.6 A
Continuous Source Current (Body Diode) (b) IS 3.5 A
Pulsed source current (body diode) (c) ISM 15 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor		 PD 1.81
14.5		 W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor		 PD 2.16
17.3		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN6A09DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
LED Products
LM24P20
KCG057QV1DB-G770
View more