Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor controlSpecifications Parameter Symbol Rating Unit ...
ZXMN6A08G: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions&...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGS | ±20 | V |
Continuous drain current @ VGS = 10V; Tamb = 25(b) @ VGS = 10V; Tamb = 70(b) @ VGS = 10V; Tamb = 25(a) |
ID | 5.3 4.2 3.8 |
A |
Pulsed drain current(c) | IDM | 20 | A |
Continuous source current (body diode)(b) | IS | 2.1 | A |
Pulsed source current (body diode)(c) | ISM | 20 | A |
Power dissipation at Tamb = 25(a) Linear derating factor |
PD | 2 16 |
W mW/ |
Power dissipation at Tamb = 25(b) Linear derating factor |
PD |
3.9 |
W mW/ |
Operating and storage temperature range | Tstg | -55 to +150 |
This new generation trench MOSFET ZXMN6A08G from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.