ZXMN6A07ZTA

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 250 mOhms
Configuration : Single Dual Drain
Package / Case : SOT-89


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• SOT89 package


Application

• DC-DC converters
• Power management functions
• Relay and solenoid driving
• Motor control


Pinout




Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	± 20	V
Continuous drain current @ VGS= 10V; Tamb=25(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25(a)	ID	2.5 2.0 1.9	A
Pulsed drain current(c)	IDM	6.8	A
Continuous source current (body diode)(b)	IS	3.3	A
Pulsed source current (body diode)(c)	ISM	6.8	A
Power dissipation at Tamb =25(a) Linear derating factor	PD	1.5 12	W mW/
Power dissipation at Tamb =25(b) Linear derating factor	PD	2.6 21	W mW/

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.

Description

This new generation trench MOSFET ZXMN6A07ZTA from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed.