ZXMN6A07FTA

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 450 mOhms at 4.5 V


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• SOT23 package


Application

• Low on-resistance
• Fast switching speed
• Low threshold
• SOT23 package


Pinout




Specifications

Parameter	Symbol	Limit	Unit
Drain-source voltage	VDSS	60	V
Gate-source voltage	VGS	± 20	V
Continuous drain current @ VGS= 10V; Tamb=25(b) @ VGS= 10V; Tamb=70(b) @ VGS= 10V; Tamb=25(a)	ID	1.4 1.1 1.2	A
Pulsed drain current(c)	IDM	6.9	A
Continuous source current (body diode)(b)	IS	1	A
Pulsed source current (body diode)(c)	ISM	6.9	A
Power dissipation at Tamb =25(a) Linear derating factor	PD	625 5	W mW/
Power dissipation at Tamb =25(b) Linear derating factor	PD	806 6.4	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to +150

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.

Description

This new generation trench MOSFET ZXMN6A07FTA from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed.