ZXMN4A06K

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• DC - DC converters• Audio output stages• Relay and solenoid driving• Motor controlSpecifications Part Number ZXMN4A06K Config...

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SeekIC No. : 004552505 Detail

ZXMN4A06K: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• DC - DC converters• Audio output stages• ...

floor Price/Ceiling Price

Part Number:
ZXMN4A06K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package





Application

• DC - DC converters
• Audio output stages
• Relay and solenoid driving
• Motor control





Specifications

Part Number ZXMN4A06K
Config/
Polarity
N
PD
(W)
9.5
VDSS
(V)
40
VGSS (+/-)
(V)
20
ID
(A)
10.9
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V 0.075
RDS(on) Max () @ VGS; 5V
RDS(on) Max () @ VGS; 10.0V 0.05
VGS(th)
(V)
1
Ciss (typ)
(pF)
810
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V
17.1


Parameter Symbol

Limit

Unit

Drain-source voltage VDSS

40

V

Gate-source voltage VGS

±20

V

Continuous drain current:
VGS=10V; TA=25 (b)
VGS=10V; TA=70 (b)
VGS=10V; TA=25 (a)
ID

10.9
8.7
7.2

A
A
A

Pulsed drain current (c) IDM

35.3

A

Continuous source current (body diode)
(b)
IS

10.8

A

Pulsed source current (body diode) (c) ISM

35.3

A

Power dissipation at TA=25 (a)
Linear derating factor
PD

4.2
33.6

W
mW/

Power dissipation at TA=25 (b)
Linear derating factor
PD

9.5
76

W
mW/

Power dissipation at TA=25 (d)
Linear derating factor
PD

2.15
17.2

W
mW/

Operating and storage temperature range Tj:Tstg

-55 to +150






Description

This new generation of trench MOSFETs ZXMN4A06K from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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