Features: • Low on-resistance•4.5V gate drive capability• Low profile SOIC packageApplication• DC-DC Converters• SMPS• Load switching• Motor control• BacklightingPinoutSpecifications Part Number ZXMN3F318DN8 Config/Polarity 2 x N PD(W)...
ZXMN3F318DN8: Features: • Low on-resistance•4.5V gate drive capability• Low profile SOIC packageApplication• DC-DC Converters• SMPS• Load switching• Motor control• ...
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Part Number | ZXMN3F318DN8 |
Config/ Polarity |
2 x N |
PD (W) |
2.1 |
VDSS (V) |
30 |
VGSS (+/-) (V) |
20 |
ID (A) |
7.3 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.039 |
RDS(on) Max() @ VGS; 10.0V | 0.024 |
VGS(th) (V) |
|
Ciss (typ) (pF) |
|
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 10V |
This new generation dual Trench MOSFET ZXMN3F318DN8 from Zetex features low on-resistance achievable with low (4.5V) gate drive.