Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UN...
ZXMN3B14F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC converters• Power management functions...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | 3.5 2.9 2.9 |
A |
Pulsed Drain Current (c) | IDM | 16 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.4 | A |
Pulsed source current (body diode) (c) | ISM | 16 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1 8 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.5 12 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of Trench MOSFETs ZXMN3B14F from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.