Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMB...
ZXMN3A06DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b)(d) VGS=10V; TA=70°C (b)(d) VGS=10V; TA=25°C (a)(d) |
ID | 6.7 5.3 5.6 |
A |
Pulsed Drain Current (c) | IDM | 25 | A |
Continuous Source Current (Body Diode) (b) | IS | 3.9 | A |
Pulsed source current (body diode) (c) | ISM | 25 | A |
Power Dissipation at TA=25°C (a) (d) Linear Derating Factor |
PD | 1.75 14 |
W mW/°C |
Power Dissipation at TA=25°C (a) (e) Linear Derating Factor |
PD | 2 16 |
W mW/°C |
Power Dissipation at TA=25°C (b) (d) Linear Derating Factor |
PD | 2.5 20 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN3A06DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.