Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMB...
ZXMN3A04DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b)(d) VGS=10V; TA=70°C (b)(d) VGS=10V; TA=25°C (a)(d) |
ID | 7.6 6.0 5.8 |
A |
Pulsed Drain Current (c) | IDM | 25 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.5 | A |
Pulsed source current (body diode) (c) | ISM | 25 | A |
Power Dissipation at TA=25°C (a) (d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C |
Power Dissipation at TA=25°C (a) (e) Linear Derating Factor |
PD | 1.8 14 |
W mW/°C |
Power Dissipation at TA=25°C (b) (d) Linear Derating Factor |
PD | 2.1 17 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN3A04DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.