Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltag...
ZXMN3A01F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain Current VGS=10V; TA=25°C(b) VGS=10V; TA=70°C(b) VGS=10V; TA=25°C(b) |
ID | 2.0 1.64 1.81 |
A |
Pulsed Drain Current (c) | IDM | 8 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.3 | A |
Pulsed source current (body diode) (c) | ISM | 8 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN3A01F from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.