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ZXMN2B03E6

Features: • Low on-resistance• Fast switching speed• Low gate drive capability• SOT23-6 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor controlSpecifications Part Number ZXMN2B03E6 Config/Polarit...

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ZXMN2B03E6: Features: • Low on-resistance• Fast switching speed• Low gate drive capability• SOT23-6 packageApplication• DC-DC converters• Power management functions• Di...

ZXMN2B03E6 Data Sheet

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Part Number:
ZXMN2B03E6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low gate drive capability
• SOT23-6 package




Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control




Specifications

Part Number ZXMN2B03E6
Config/
Polarity		 N
PD
(W)		 1.1
VDSS
(V)		 20
VGSS
(+/-)
(V)		 8
ID
(A)		 5.4
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V 0.075
RDS(on) Max() @ VGS; 2.5V 0.055
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.04
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)		 0.4
Ciss (typ)
(pF)		 1160
Qg (typ) (nC)
@ VGS; 4.5V		 14.5
Qg (typ) (nC)
@ VGS; 10V


Parameter Symbol Limit Unit
Drain-source voltage VDSS 20 V
Gate-source voltage VGS ±8 V
Continuous drain current @ VGS= 4.5V; Tamb=25(b)
@ VGS= 4.5V; Tamb=70(b)
@ VGS= 4.5V; Tamb=25(a)		 ID 5.4 A
4.3
4.3
Pulsed drain current(c) IDM 26 A
Continuous source current (body diode)(b) IS 2.8 A
Pulsed source current (body diode)(c) ISM 26 A
Power dissipation at Tamb =25(a) Linear derating factor PD 1.1
8.8		 W
mW/
Power dissipation at Tamb =25(b) Linear derating factor PD 1.7
13.7		 W
mW/
Operating and storage temperature range Tj, Tstg -55 to +150

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.






Description

This new generation trench MOSFETZXMN2B03E6  from Zetex features low onresistance achievable with low gate drive.






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