Features: • Low on-resistance• Fast switching speed• Low gate drive capability• SOT23-6 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor controlSpecifications Part Number ZXMN2B03E6 Config/Polarit...
ZXMN2B03E6: Features: • Low on-resistance• Fast switching speed• Low gate drive capability• SOT23-6 packageApplication• DC-DC converters• Power management functions• Di...
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Part Number | ZXMN2B03E6 |
Config/ Polarity |
N |
PD (W) |
1.1 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
8 |
ID (A) |
5.4 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | 0.075 |
RDS(on) Max() @ VGS; 2.5V | 0.055 |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.04 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.4 |
Ciss (typ) (pF) |
1160 |
Qg (typ) (nC) @ VGS; 4.5V |
14.5 |
Qg (typ) (nC) @ VGS; 10V |
Parameter | Symbol | Limit | Unit |
Drain-source voltage | VDSS | 20 | V |
Gate-source voltage | VGS | ±8 | V |
Continuous drain current @ VGS= 4.5V; Tamb=25(b) @ VGS= 4.5V; Tamb=70(b) @ VGS= 4.5V; Tamb=25(a) |
ID | 5.4 | A |
4.3 | |||
4.3 | |||
Pulsed drain current(c) | IDM | 26 | A |
Continuous source current (body diode)(b) | IS | 2.8 | A |
Pulsed source current (body diode)(c) | ISM | 26 | A |
Power dissipation at Tamb =25(a) Linear derating factor | PD | 1.1 8.8 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor | PD | 1.7 13.7 |
W mW/ |
Operating and storage temperature range | Tj, Tstg | -55 to +150 |
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
This new generation trench MOSFETZXMN2B03E6 from Zetex features low onresistance achievable with low gate drive.