ZXMN2AM832

Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions• Disconnection switches• Motor ControlPinoutSpecifications Part Number ZXMN2AM83...

product image

ZXMN2AM832 Picture
SeekIC No. : 004552480 Detail

ZXMN2AM832: Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions...

floor Price/Ceiling Price

Part Number:
ZXMN2AM832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low On - Resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP





Application

• DC-DC Converters
• Power Management Functions
• Disconnection switches
• Motor Control





Pinout

  Connection Diagram




Specifications

Part Number ZXMN2AM832
Config/
Polarity
2 x N
PD
(W)
1.5
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
3.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.3
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.12
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
310
Qg (typ) (nC)
@ VGS; 4.5V
3.1
Qg (typ) (nC)
@ VGS; 10V


PARAMETER
SYMBOL
N-Channel
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGS
12
V
Continuous Drain Current @VGS=10V; TA=25 (b) (f)
@VGS=10V; TA=70 (b) (f)
@VGS=10V; TA=25 (a) (f)
ID
3.7
3.0
2.9
A
A
A
Pulsed Drain Current
IDM
13
A
Continuous Source Current (Body Diode) (b) (f)
IS
3.0
A
Pulsed Source Current (Body Diode)
ISM
13
A
Power Dissipation at TA=25 (a) (f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25 (b) (f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25 (c) (f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25 (d) (f)
Linear Derating Factor
PD
1.13
9
W
mW/
Power Dissipation at TA=25 (d) (g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
Power Dissipation at TA=25 (e) (g)
Linear Derating Factor
PD
3
24
W
mW/
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150





Description

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Motors, Solenoids, Driver Boards/Modules
Crystals and Oscillators
Audio Products
RF and RFID
View more