Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions• Disconnection switches• Motor ControlPinoutSpecifications Part Number ZXMN2AM83...
ZXMN2AM832: Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• DC-DC Converters• Power Management Functions...
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Part Number | ZXMN2AM832 |
Config/ Polarity |
2 x N |
PD (W) |
1.5 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
3.7 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | 0.3 |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.12 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
310 |
Qg (typ) (nC) @ VGS; 4.5V |
3.1 |
Qg (typ) (nC) @ VGS; 10V |
PARAMETER |
SYMBOL |
N-Channel |
UNIT |
Drain-Source Voltage |
VDSS |
20 |
V |
Gate-Source Voltage |
VGS |
12 |
V |
Continuous Drain Current @VGS=10V; TA=25 (b) (f) @VGS=10V; TA=70 (b) (f) @VGS=10V; TA=25 (a) (f) |
ID |
3.7 3.0 2.9 |
A A A |
Pulsed Drain Current |
IDM |
13 |
A |
Continuous Source Current (Body Diode) (b) (f) |
IS |
3.0 |
A |
Pulsed Source Current (Body Diode) |
ISM |
13 |
A |
Power Dissipation at TA=25 (a) (f) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
Power Dissipation at TA=25 (b) (f) Linear Derating Factor |
PD |
2.45 19.6 |
W mW/ |
Power Dissipation at TA=25 (c) (f) Linear Derating Factor |
PD |
1 8 |
W mW/ |
Power Dissipation at TA=25 (d) (f) Linear Derating Factor |
PD |
1.13 9 |
W mW/ |
Power Dissipation at TA=25 (d) (g) Linear Derating Factor |
PD |
1.7 13.6 |
W mW/ |
Power Dissipation at TA=25 (e) (g) Linear Derating Factor |
PD |
3 24 |
W mW/ |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count