Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC Converters• Power Management functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UN...
ZXMN2A14F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC-DC Converters• Power Management functions...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -20 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) VGS=4.5V; TA=25°C(b) |
ID | 4.1 3.3 3.4 |
A |
Pulsed Drain Current (c) | IDM | 19 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.7 | A |
Pulsed source current (body diode) (c) | ISM | 19 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1 8 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.5 12 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXMN2A14F |
Config/ Polarity |
N |
PD (W) |
1 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
4.1 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | 0.11 |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.06 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
544 |
Qg (typ) (nC) @ VGS; 4.5V |
6.6 |
Qg (typ) (nC) @ VGS; 10V |
This new generation of Trench MOSFETsZXMN2A14F from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.