ZXMN2A04DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number Z...

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SeekIC No. : 004552478 Detail

ZXMN2A04DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

floor Price/Ceiling Price

Part Number:
ZXMN2A04DN8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package





Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control





Pinout

  Connection Diagram




Specifications

Part Number ZXMN2A04DN8
Config/
Polarity
2 x N
PD
(W)
2.1
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
7.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.035
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.025
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
1880
Qg (typ) (nC)
@ VGS; 4.5V
40.5
Qg (typ) (nC)
@ VGS; 10V


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)(d)
VGS=10V; TA=70°C (b)(d)
VGS=10V; TA=25°C (b)(d)
ID 6.8
5.4
5.2
A
Pulsed Drain Current (c) IDM 23 A
Continuous Source Current (Body Diode) (b) IS 12 A
Pulsed source current (body diode) (c) ISM 23 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor
PD 1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor
PD 1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor
PD 2.1
17
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN2A04DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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