Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Disconnect switches• Motor controlPinoutSpecifications Part Number ZXMN2A02N8 Config/Polarity N PD(W) 2.5 VDSS (V) ...
ZXMN2A02N8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Disconnect switches• Motor controlP...
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Part Number | ZXMN2A02N8 |
Config/ Polarity |
N |
PD (W) |
2.5 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
10.2 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | 0.04 |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.02 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
1900 |
Qg (typ) (nC) @ VGS; 4.5V |
18.9 |
Qg (typ) (nC) @ VGS; 10V |
Parameter | Symbol | Rating | Unit |
Drain-Source Voltage | VDSS | 20 | V |
Gate Source Voltage | VGS | ±12 | V |
Continuous Drain Current VGS=-10V; TA=25 (b) VGS=-10V; TA=70 (b) VGS=-10V; TA=25 (a) |
ID | 10.2 8.2 8.3 |
A |
Pulsed Drain Current (c) | IDM | 50 | A |
Continuous Source Current (Body Diode) (b) | IS | 4.3 | A |
Pulsed Source Current (Body Diode) (c) | ISM | 50 | A |
Power Dissipation at TA=25 (a) Linear Derating Factor |
PD | 1.56 12.5 |
W mW/ |
Power Dissipation at TA=25 (b) Linear Derating Factor |
PD |
2.5 |
W mW/ |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |
This new generation of TRENCH MOSFETs ZXMN2A02N8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.