ZXMN2A02N8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Disconnect switches• Motor controlPinoutSpecifications Part Number ZXMN2A02N8 Config/Polarity N PD(W) 2.5 VDSS (V) ...

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SeekIC No. : 004552475 Detail

ZXMN2A02N8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Disconnect switches• Motor controlP...

floor Price/Ceiling Price

Part Number:
ZXMN2A02N8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package





Application

• Disconnect switches
• Motor control





Pinout

  Connection Diagram




Specifications

Part Number ZXMN2A02N8
Config/
Polarity
N
PD
(W)
2.5
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
10.2
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.04
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.02
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
1900
Qg (typ) (nC)
@ VGS; 4.5V
18.9
Qg (typ) (nC)
@ VGS; 10V


Parameter Symbol Rating Unit
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ±12 V
Continuous Drain Current VGS=-10V; TA=25 (b)
VGS=-10V; TA=70 (b)
VGS=-10V; TA=25 (a)
ID 10.2
8.2
8.3
A
Pulsed Drain Current (c) IDM 50 A
Continuous Source Current (Body Diode) (b) IS 4.3 A
Pulsed Source Current (Body Diode) (c) ISM 50 A
Power Dissipation at TA=25 (a)
Linear Derating Factor
PD 1.56
12.5
W
mW/
Power Dissipation at TA=25 (b)
Linear Derating Factor
PD

2.5
20

W
mW/
Channel temperature Tch 150
Storage temperature Tstg -55 to +150





Description

This new generation of TRENCH MOSFETs ZXMN2A02N8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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