Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltag...
ZXMN2A01F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23 packageApplication• DC - DC Converters• Power Management Functions...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 20 | V |
Gate Source Voltage | VGS | 12 | V |
Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) VGS=4.5V; TA=25°C(a) |
ID | 2.09 1.67 1.84 |
A |
Pulsed Drain Current (c) | IDM | 10 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.05 | A |
Pulsed Source Current (Body Diode)(c) | ISM | 10 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXMN2A01F |
Config/ Polarity |
N |
PD (W) |
0.8 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
2 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | 0.225 |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.12 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
310 |
Qg (typ) (nC) @ VGS; 4.5V |
3 |
Qg (typ) (nC) @ VGS; 10V |
This new generation of TRENCH MOSFETs ZXMN2A01F from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.