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ZXMN2A01E6

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number ZXMN2A01E6...

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ZXMN2A01E6: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functio...

ZXMN2A01E6 Data Sheet

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Part Number:
ZXMN2A01E6
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package




Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXMN2A01E6
Config/
Polarity		 N
PD
(W)		 1.7
VDSS
(V)		 20
VGSS
(+/-)
(V)		 12
ID
(A)		 3
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V 0.225
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.12
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)		 0.7
Ciss (typ)
(pF)		 299
Qg (typ) (nC)
@ VGS; 4.5V		 3
Qg (typ) (nC)
@ VGS; 10V


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS 12 V
Continuous Drain Current VGS=4.5V; TA=25°C(b)
VGS=4.5V; TA=70°C(b)
VGS=4.5V; TA=25°C(a)		 ID 3.03
2.43
2.44		 A
Pulsed Drain Current (c) IDM 10 A
Continuous Source Current (Body Diode) (b) IS 1.8 A
Pulsed Source Current (Body Diode)(c) ISM 10 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 1.1
8.8		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 1.7
13.6		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN2A01E6 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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