Features: • Low on-resistance• Fast switching speed• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor controlPinoutSpecifications Parameter Symbol Limit Unit Drain-source v...
ZXMN10A25G: Features: • Low on-resistance• Fast switching speed• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions• Disconnect swi...
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Parameter | Symbol | Limit | Unit |
Drain-source voltage | VDSS | 100 | V |
Gate-source voltage | VGS | ± 20 | V |
Continuous drain current @ VGS= 10V; Tamb=25(b) @ VGS= 10V; Tamb=70(b) @ VGS= 10V; Tamb=25(a) |
ID | 4 3.2 2.9 |
A |
Pulsed drain current(c) | IDM | 17 | A |
Continuous source current (body diode)(b) | IS | 5.4 | A |
Pulsed source current (body diode)(c) | ISM | 17 | A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD | 2 16 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor |
PD | 3.9 31 |
W mW/ |
Operating and storage temperature range | Tj, Tstg | -55 to +150 |
This new generation trench MOSFET ZXMN10A25G from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.