ZXMN10A11K

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 2.4A
Packaging: Cut Tape (CT)
Manufacturer: Diodes Inc
Supplier Device Package: TO-252-3
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
Gate Charge (Qg) @ Vgs: 5.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 274pF @ 50V
Power - Max: 2.11W


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package




Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control




Pinout






Specifications

Part Number	ZXMN10A11K
Config/ Polarity	N
PD (W)	4
VDSS (V)	100
VGSS (+/-) (V)	20
ID (A)	2.4
RDS(on) Max() @ VGS; 2.4V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.6V
RDS(on) Max() @ VGS; 3V
RDS(on) Max() @ VGS; 4.3V
RDS(on) Max() @ VGS; 4.5V
RDS(on) Max() @ VGS; 5V
RDS(on) Max() @ VGS; 6V	0.45
RDS(on) Max() @ VGS; 10.0V	0.35
VGS(th) (V)	2
Ciss (typ) (pF)	274
Qg (typ) (nC) @ VGS;4.5V
Qg (typ) (nC) @ VGS; 10V	5.4

Description

This new generation trench MOSFET ZXMN10A11K from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.