MOSFET N-CHAN 100V SOT223
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Series: | - | Manufacturer: | Diodes Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 11.5 dB at 500 MHz | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 100V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 3.2A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 250µA | Gate Charge (Qg) @ Vgs: | 7.7nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 405pF @ 50V | ||
Power - Max: | 2W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-261-4, TO-261AA | Supplier Device Package: | SOT-223 |
Part Number | ZXMN10A08G |
Config/ Polarity |
N |
PD (W) |
2 |
VDSS (V) |
100 |
VGSS (+/-) (V) |
20 |
ID (A) |
2 |
RDS(on) Max() @ VGS; 2.4V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.6V | |
RDS(on) Max() @ VGS; 3V | |
RDS(on) Max() @ VGS; 4.3V | |
RDS(on) Max() @ VGS; 4.5V | |
RDS(on) Max() @ VGS; 5V | |
RDS(on) Max() @ VGS; 6V | 0.3 |
RDS(on) Max() @ VGS; 10.0V | 0.25 |
VGS(th) (V) |
2 |
Ciss (typ) (pF) |
405 |
Qg (typ) (nC) @ VGS;4.5V |
|
Qg (typ) (nC) @ VGS; 10V |
7.7 |