Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT...
ZXMN10A08E6: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT23-6 packageApplication• DC - DC Converters• Power Management Functio...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 100 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (a) VGS=10V; TA=70°C(b) VGS=10V; TA=25°C(d) |
ID | 1.5 1.2 1.21 |
A |
Pulsed Drain Current (c) | IDM | 5.3 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.5 | A |
Pulsed source current (body diode) (c) | ISM | 5.3 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.1 8.8 |
W mW/°C |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMN10A08E6 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.