Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power management functions• Disconnect switches• Motor controlSpecifications PARAMETER SYMBO...
ZXMN10A08DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power managemen...
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PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Drain-source voltage |
VDSS |
100 |
V |
Gate source voltage |
VGS |
20 |
V |
Continuous drain current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID |
2.1 1.7 1.6 |
A |
Pulsed drain current (c) |
IDM |
9 |
A |
Continuous source current (body diode) (b) |
IS |
2.6 |
A |
Pulsed source current (body diode) (c) |
ISM |
9 |
A |
Power dissipation at TA=25°C (a) Linear derating factor |
PD |
1.25 10 |
W mW/°C |
Power dissipation at TA=25°C (b) Linear derating factor |
PD |
1.8 14.5 |
W mW/°C |
Operating and storage temperature range |
Tj:Tstg |
-55 to +150 |
°C |
This new generation of TRENCH MOSFETsZXMN10A08DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.