Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• SM8 packageApplication• Motor drivePinoutSpecifications PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage VDSS 60 -60 V Gate Source Voltage VGS...
ZXMHC6A07T8: Features: • Low On - Resistance• Fast switching speed• Low threshold• Low gate drive• SM8 packageApplication• Motor drivePinoutSpecifications PARAMETER SYMB...
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PARAMETER | SYMBOL | N-Channel | P-Channel | UNIT |
Drain-Source Voltage | VDSS | 60 | -60 | V |
Gate Source Voltage | VGS | ± 20 | ± 20 | V |
Continuous Drain Current@VGS=10V; TA=25°C (b)(d) @VGS=10V; TA=70°C (b)(d) @VGS=10V; TA=25°C (a)(d) |
ID | 1.8 1.4 1.6 |
-1.5 -1.2 -1.3 |
A |
Pulsed Drain Current (c) | IDM | 8.7 | -7.5 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.3 | -2.1 | A |
Pulsed source current (body diode) (c) | ISM | 8.7 | -7.5 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.3 10.4 |
W mW/°C | |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of trench MOSFETs ZXMHC6A07T8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.