Power Driver ICs Mosfet H-Bridge 100/-100 1.1/-0.9
ZXMHC10A07N8TC: Power Driver ICs Mosfet H-Bridge 100/-100 1.1/-0.9
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Rise Time : | 1.5 ns | Fall Time : | 2.1 ns | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Technical/Catalog Information | ZXMHC10A07N8TC |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N and 2 P-Channel (H-Bridge) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 800mA, 680mA |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 1.5A, 10V |
Input Capacitance (Ciss) @ Vds | 138pF @ 60V |
Power - Max | 870mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 2.9nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ZXMHC10A07N8TC ZXMHC10A07N8TC ZXMHC10A07N8DICT ND ZXMHC10A07N8DICTND ZXMHC10A07N8DICT |