Power Driver ICs Mosfet H-Bridge 60/-60V 1.8/-1.4A
ZXMHC6A07N8TC: Power Driver ICs Mosfet H-Bridge 60/-60V 1.8/-1.4A
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Rise Time : | 1.4 ns | Fall Time : | 2 ns | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Technical/Catalog Information | ZXMHC6A07N8TC |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N and 2 P-Channel (H-Bridge) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 1.39A, 1.28A |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1.8A, 10V |
Input Capacitance (Ciss) @ Vds | 166pF @ 40V |
Power - Max | 870mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.2nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ZXMHC6A07N8TC ZXMHC6A07N8TC ZXMHC6A07N8DITR ND ZXMHC6A07N8DITRND ZXMHC6A07N8DITR |