MOSFET 30V N&P Chnl HDMOS
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Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SO...
Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.3 A | ||
Resistance Drain-Source RDS (on) : | 135 mOhms, 185 mOhms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MSOP-8 | Packaging : | Reel |