Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage...
ZXMD63C02X: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor co...
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Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SO...
PARAMETER | SYMBOL | N-CHANNEL | P-CHANNEL | UNIT |
Drain-Source Voltage | VDSS | 20 | -20 | V |
Gate Source Voltage | VGS | ± 12 | V | |
Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b) |
ID | 2.4 1.9 |
-1.7 -1.35 |
A |
Pulsed Drain Current (c)(d) | IDM | 19 | -9.6 | A |
Continuous Source Current (Body Diode)(b)(d) | IS | -1.5 | -1.4 | A |
Pulsed Source Current (Body Diode)(c)(d) | ISM | 19 | -9.6 | A |
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor |
PD | 0.87 6.9 |
W mW/°C | |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.04 8.3 |
W mW/°C | |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high density MOSFETs ZXMD63C02X from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.