Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage...
ZXMD63C03X: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor co...
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Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SO...
PARAMETER | SYMBOL | N-CHANNEL | P-CHANNEL | UNIT |
Drain-Source Voltage | VDSS | 30 | 30 | V |
Gate Source Voltage | VGS | ± 20 | V | |
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d) VGS=4.5V; TA=70°C (b)(d) |
ID | 2.3 1.8 |
-2.0 -1.6 |
A |
Pulsed Drain Current (c) | IDM | 14 | -9.6 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.5 | -1.4 | A |
Pulsed source current (body diode) (c) | ISM | 14 | -9.6 | A |
Power Dissipation at TA=25°C (a)(b) Linear Derating Factor |
PD | 0.87 6.9 |
W mW/°C | |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.04 8.3 |
W mW/°C | |
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXMD63C03X |
Config/ Polarity |
N+P |
PD (W) |
1.25 |
VDSS (V) |
30 -30 |
VGSS (+/-) (V) |
20 20 |
ID (A) |
2.3 -2 |
RDS (on) Max () @ VGS 1.8V | - |
RDS (on) Max () @ VGS 2.5V | - |
RDS (on) Max () @ VGS 4.5V | 0.2 0.27 |
RDS (on) Max () @ VGS 5V | - |
RDS (on) Max () @ VGS 10.0V | 0.135 0.185 |
VGS(th) (V) |
1 -1 |
Ciss (typ) (pF) |
290 |
Qg (typ) (nC) @ VGS 10V |
8 |
This new generation of high density MOSFETs ZXMD63C03X from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.