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ZXMC4A16DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinoutSpecifications Part Number ZXMC4A16DN8 Config/Polarity N+P PD(W) 2.1 VDSS (V) 4...

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SeekIC No. : 004552448 Detail

ZXMC4A16DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinout...

ZXMC4A16DN8 Data Sheet

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Part Number:
ZXMC4A16DN8
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• Motor drive
• LCD backlighting




Pinout

Connection Diagram




Specifications

Part Number ZXMC4A16DN8
Config/
Polarity		 N+P
PD
(W)		 2.1
VDSS
(V)		 40
-40
VGSS (+/-)
(V)		 20
20
ID
(A)		 -
RDS (on) Max () @ VGS 1.8V -
RDS (on) Max () @ VGS 2.5V -
RDS (on) Max () @ VGS 4.5V 0.075
0.1
RDS (on) Max () @ VGS 5V -
RDS (on) Max () @ VGS 10.0V 0.05
0.06
VGS(th)
(V)		 1.0 (Min)
-1.0 (Min)
Ciss (typ)
(pF)		 770
1000
Qg (typ) (nC)
@ VGS 10V		 -26


Parameter Symbol N-channel P-channe| Unit
Drain-Source Voltage VDSS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current
(VGS= 10V; TA=25) (b)(d)
(VGS= 10V; TA=70) (b)(d)
(VGS= 10V; TA=25) (a)(d)		 ID 5.2
4.1
4.0		 -4.7
-3.8
-3.6		 A
Pulsed Drain Current C IDM 24 2.3 A
Continuous source current (body diode) (b) IS 2.5 2.3 A
Continuous source current (body diode) (b) ISM 24 23 A
Power dissipation at TA =25 (a) (d)
Linear derating factor		 PD 1.25
10		 W
mW/
Power dissipation at TA =25 (a) (e)
Linear derating factor		 PD 1.8
14		 W
mW/
Power dissipation at TA =25 (b) (d)
Linear derating factor		 PD 2.1
17		 W
mW/
Operating Junction and Storage Temperature Range TJ,TSTG - 55 to 150





Description

This new generation of trench MOSFETs ZXMC4A16DN8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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