Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinoutSpecifications Part Number ZXMC4A16DN8 Config/Polarity N+P PD(W) 2.1 VDSS (V) 4...
ZXMC4A16DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinout...
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Part Number | ZXMC4A16DN8 |
Config/ Polarity |
N+P |
PD (W) |
2.1 |
VDSS (V) |
40 -40 |
VGSS (+/-) (V) |
20 20 |
ID (A) |
- |
RDS (on) Max () @ VGS 1.8V | - |
RDS (on) Max () @ VGS 2.5V | - |
RDS (on) Max () @ VGS 4.5V | 0.075 0.1 |
RDS (on) Max () @ VGS 5V | - |
RDS (on) Max () @ VGS 10.0V | 0.05 0.06 |
VGS(th) (V) |
1.0 (Min) -1.0 (Min) |
Ciss (typ) (pF) |
770 1000 |
Qg (typ) (nC) @ VGS 10V |
-26 |
Parameter | Symbol | N-channel | P-channe| | Unit |
Drain-Source Voltage | VDSS | 40 | -40 | V |
Gate-Source Voltage | VGS | ±20 | ±20 | V |
Continuous Drain Current (VGS= 10V; TA=25) (b)(d) (VGS= 10V; TA=70) (b)(d) (VGS= 10V; TA=25) (a)(d) |
ID | 5.2 4.1 4.0 |
-4.7 -3.8 -3.6 |
A |
Pulsed Drain Current C | IDM | 24 | 2.3 | A |
Continuous source current (body diode) (b) | IS | 2.5 | 2.3 | A |
Continuous source current (body diode) (b) | ISM | 24 | 23 | A |
Power dissipation at TA =25 (a) (d) Linear derating factor |
PD | 1.25 10 |
W mW/ | |
Power dissipation at TA =25 (a) (e) Linear derating factor |
PD | 1.8 14 |
W mW/ | |
Power dissipation at TA =25 (b) (d) Linear derating factor |
PD | 2.1 17 |
W mW/ | |
Operating Junction and Storage Temperature Range | TJ,TSTG | - 55 to 150 |
This new generation of trench MOSFETs ZXMC4A16DN8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.