MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
ZXMC10A816N8TC: MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.1 A at N Channel, 2.2 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 230 mOhms at N Channel, 235 mOhms at P Channel | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO | Packaging : | Reel |
Technical/Catalog Information | ZXMC10A816N8TC |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 230 mOhm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 497pF @ 50V |
Power - Max | 1.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 9.2nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ZXMC10A816N8TC ZXMC10A816N8TC ZXMC10A816N8DITR ND ZXMC10A816N8DITRND ZXMC10A816N8DITR |