MOSFET 30V Enhancement Mode
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Specifications Part Number ZXMC10A816N8 Config/Polarity N+P PD(W) 2.42.6 VDSS (V) ...
Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.4 A at N Channel, 4.4 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 50 mOhms at N Channel, 70 mOhms at P Channel | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO | Packaging : | Reel |