Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinoutSpecifications Part Number ZXMC4559DN8 Config/Polarity N+P PD(W) 2.1 VDSS (V) 6...
ZXMC4559DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinout...
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Specifications Part Number ZXMC10A816N8 Config/Polarity N+P PD(W) 2.42.6 VDSS (V) ...
Part Number | ZXMC4559DN8 |
Config/ Polarity |
N+P |
PD (W) |
2.1 |
VDSS (V) |
60 -60 |
VGSS (+/-) (V) |
20 20 |
ID (A) |
4.7 -3.9 |
RDS (on) Max () @ VGS 1.8V | - |
RDS (on) Max () @ VGS 2.5V | - |
RDS (on) Max () @ VGS 4.5V | 0.075 0.125 |
RDS (on) Max () @ VGS 5V | - |
RDS (on) Max () @ VGS 10.0V | 0.055 0.085 |
VGS(th) (V) |
1.0 (Min) -1.0 (Min) |
Ciss (typ) (pF) |
1063 1021 |
Qg (typ) (nC) @ VGS 10V |
20.4 -24.2 |
PARAMETER | SYMBOL | N-Channel | P-Channel | UNIT |
Drain-Source Voltage | VDSS | 60 | -60 | V |
Gate Source Voltage | VGS | ± 20 | ± 20 | V |
Continuous Drain Current@VGS=10V; TA=25°C (b)(d) @VGS=10V; TA=70°C (b)(d) @VGS=10V; TA=25°C (a)(d) |
ID | 4.7 3.7 3.6 |
-3.9 -2.8 -2.6 |
A |
Pulsed Drain Current (c) | IDM | 22.2 | -18.3 | A |
Continuous Source Current (Body Diode) (b) | IS | 3.4 | -3.2 | A |
Pulsed source current (body diode) (c) | ISM | 22.2 | -18.3 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C | |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.8 14 |
W mW/°C | |
Power Dissipation at TA=25°C (d) Linear Derating Factor |
PD | 2.1 17 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs ZXMC4559DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.