Features: • Low on - resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• MOSFET gate drive• LCD backlight inverters• Motor controlPinoutSpecifications PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-...
ZXMC3AM832: Features: • Low on - resistance• Fast switching speed• Low threshold• Low gate drive• 3mm x 2mm MLPApplication• MOSFET gate drive• LCD backlight inverters...
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Specifications Part Number ZXMC10A816N8 Config/Polarity N+P PD(W) 2.42.6 VDSS (V) ...
PARAMETER | SYMBOL | N-Channel | P-Channel | UNIT |
Drain-Source Voltage | VDSS | 30 | -30 | V |
Gate Source Voltage | VGS | ± 20 | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | 3.7 3.0 2.9 |
-2.7 -2.2 -2.1 |
A |
Pulsed Drain Current (c) | IDM | 12.4 | -9.2 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.4 | -2.8 | A |
Pulsed source current (body diode) (c) | ISM | 12.4 | -9.2 | A |
Power Dissipation at TA=25°C (a)(f) Linear Derating Factor |
PD | 1.5 12 |
W mW/°C | |
Power Dissipation at TA=25°C (b)(f) Linear Derating Factor |
PD | 2.45 19.6 |
W mW/°C | |
Power Dissipation at TA=25°C (c)(f) Linear Derating Factor |
PD | 1 8 |
W mW/°C | |
Power Dissipation at TA=25°C (d)(f) Linear Derating Factor |
PD | 1.13 8 |
W mW/°C | |
Power Dissipation at TA=25°C (d)(g) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C |
Part Number | ZXMC3AM832 |
Config/ Polarity |
N+P |
PD (W) |
2.45 |
VDSS (V) |
30 -30 |
VGSS (+/-) (V) |
20 20 |
ID (A) |
3.7 -2.7 |
RDS (on) Max () @ VGS 1.8V | - |
RDS (on) Max () @ VGS 2.5V | - |
RDS (on) Max () @ VGS 4.5V | 0.18 0.33 |
RDS (on) Max () @ VGS 5V | - |
RDS (on) Max () @ VGS 10.0V | 0.12 0.21 |
VGS(th) (V) |
1 -0.8 |
Ciss (typ) (pF) |
190 |
Qg (typ) (nC) @ VGS 10V |
3.9 |
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) ZXMC3AM832 outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count