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ZXMC3A18DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinoutSpecifications Part Number ZXMC3A18DN8 Config/Polarity N+P PD(W) 2.1 VDSS (V) 3...

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SeekIC No. : 004552444 Detail

ZXMC3A18DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinout...

ZXMC3A18DN8 Data Sheet

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Part Number:
ZXMC3A18DN8
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• Motor Drive
• LCD backlighting




Pinout

Connection Diagram




Specifications

Part Number ZXMC3A18DN8
Config/
Polarity		 N+P
PD
(W)		 2.1
VDSS
(V)		 30
-30
VGSS (+/-)
(V)		 20
20
ID
(A)		 7.6
-6.3
RDS (on) Max () @ VGS 1.8V -
RDS (on) Max () @ VGS 2.5V -
RDS (on) Max () @ VGS 4.5V 0.03
0.05
RDS (on) Max () @ VGS 5V -
RDS (on) Max () @ VGS 10.0V 0.025
0.035
VGS(th)
(V)		 1
-1
Ciss (typ)
(pF)		 1800
Qg (typ) (nC)
@ VGS 10V		 36


PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage VDSS 30 -30 V
Gate Source Voltage VGS ± 20 ± 20 V
Continuous Drain Current@VGS=10V; TA=25°C (b)(d)
@VGS=10V; TA=70°C (b)(d)
@VGS=10V; TA=25°C (a)(d)
 ID 7.6
6.1
5.8		 -6.3
-5.0
-4.8		 A
Pulsed Drain Current (c) IDM 37 -30 A
Continuous Source Current (Body Diode) (b) IS 3.6 tbd A
Pulsed source current (body diode) (c) ISM 37 30 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor		 PD 1.8
14		 W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor		 PD 2.1
17		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of trench MOSFETsZXMC3A18DN8  from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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