ZXMC3A17DN8

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.065 Ohms
Continuous Drain Current : 5.4 A


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• Motor drive
• LCD backlighting




Pinout






Specifications

PARAMETER	SYMBOL	N-Channel	P-Channel	UNIT
Drain-Source Voltage	VDSS	30	-30	V
Gate Source Voltage	VGS	± 20	± 20	V
Continuous Drain Current@VGS=10V; TA=25°C (b)(d) @VGS=10V; TA=70°C (b)(d) @VGS=10V; TA=25°C (a)(d)	ID	5.4 4.3 4.1	-4.4 -3.6 -3.4	A
Pulsed Drain Current (c)	IDM	23	-20	A
Continuous Source Current (Body Diode) (b)	IS	2.6	-2.5	A
Pulsed source current (body diode) (c)	ISM	23	-20	A
Power Dissipation at TA=25°C (a) (d) Linear Derating Factor	PD	1.25 10		W mW/°C
Power Dissipation at TA=25°C (a) (e) Linear Derating Factor	PD	1.8 14		W mW/°C
Power Dissipation at TA=25°C (b) (d) Linear Derating Factor	PD	2.1 17		W mW/°C
Operating and Storage Temperature Range	Tj:Tstg	-55 to +150		°C

Part Number	ZXMC3A17DN8
Config/ Polarity	N+P
PD (W)	2.1
VDSS (V)	30 -30
VGSS (+/-) (V)	20 20
ID (A)	5.4 -4.4
RDS (on) Max () @ VGS 1.8V	-
RDS (on) Max () @ VGS 2.5V	-
RDS (on) Max () @ VGS 4.5V	0.065 0.11
RDS (on) Max () @ VGS 5V	-
RDS (on) Max () @ VGS 10.0V	0.05 0.07
VGS(th) (V)	1 -1
Ciss (typ) (pF)	600
Qg (typ) (nC) @ VGS 10V	12.2

Description

This new generation of trench MOSFETs ZXMC3A17DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.