Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number Z...
ZXM66P03N8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...
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Part Number | ZXM66P03N8 |
Config/ Polarity |
P |
PD (W) |
0.8 |
VDSS (V) |
-20 |
VGSS (+/-) (V) |
12 |
ID (A) |
-1.5 |
RDS(on) Max() @ VGS;-1.8V | - |
RDS(on) Max() @ VGS;-2.5V | - |
RDS(on) Max() @ VGS;-2.7V | - |
RDS(on) Max() @ VGS -4.5V | 0.23 |
RDS(on) Max() @ VGS;-10V | 0.15 |
VGS(th) (V) |
-1(Min) |
Ciss (typ) (pF) |
330 |
Qg (typ) (nC) @VGS 4.5V |
- |
Qg (typ) (nC) @VGS 10V |
10.2 (max) |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | -7.9 -6.3 -6.25 |
A |
Pulsed Drain Current (c) | IDM | -28 | A |
Continuous Source Current (Body Diode) (b) | IS | -4.1 | A |
Pulsed source current (body diode) (c) | ISM | -28 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.56 12.5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 2.5 20 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high density MOSFETs ZXM66P03N8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.