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ZXM66N03N8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SY...

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ZXM66N03N8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

ZXM66N03N8 Data Sheet

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Part Number:
ZXM66N03N8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package


Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control


Pinout

Connection Diagram


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate- Source Voltage
VGS
±20
V
Continuous Drain Current (VGS=10V; TA=25)(b)(d)
                                         (VGS=10V; TA=70)(b)(d)
ID
9.0
8.0
A
Pulsed Drain Current (c)(d)
IDM
35
A
Continuous Source Current (Body Diode)(b)(d)
IS
3.1
A
Pulsed Source Current (Body Diode)(c)(d)
ISM
35
A
Power Dissipation at TA=25 (a)(d)
Linear Derating Factor
PD
-
-
W
mW/
Power Dissipation at TA=25 (a)(e)
Linear Derating Factor
PD
-
-
W
mW/
Power Dissipation at TA=25 (b)(d)
Linear Derating Factor
PD
2.5
20
W
mW/
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150



Description

This new generation of high density MOSFETs ZXM66N03N8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.




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