Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V ...
ZXM64N03X: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor co...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain Current VGS=10V; TA=25°C(b) VGS=10V; TA=70°C(b) |
ID | 5.0 4.0 |
A |
Pulsed Drain Current (c) | IDM | 30 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.4 | A |
Pulsed source current (body diode) (c) | ISM | 30 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.1 8.8 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.8 14.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high density MOSFETs ZXM64N03X from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.